3DG122

www.DataSheet4U.net Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG122 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Total Dissipation Max. Collector Current Junction Temperature Storage Temperature C-B Breakdown Voltage Symbols Unit Specifications A B C D (Ta = 25°C ) Test Condition Ta=25°C Ptot ICM Tjm Tstg V(BR)CBO C-E Breakdown Voltage V(BR)CEO E-B Breakdown Voltage V(BR)EBO Collector- Emitter Saturation Voltage Drop Base- Emitter Saturation Voltage Drop C-B Leakage Current C-E Leakage Current E-B Leakage Current DC Current Gain Transition frequency mW mA °C °C V V V V V uA uA uA MHz Yellow 40~55 500 100 175 -55~+175 40 30 60 45 40 30 60 45 IC=0.1mA IE=0.1mA IC=50mA IB=5mA VCB=10V VCE=10V VEB=1.5V VCE=10V, IC=30mA VCE=10V, IC=30mA f=100MHz Gray 180~270 4 0.5 1.0 0.1 0.2 0.1 25~270 500 500 Green 55~80 VCE(sat) VBE(sat) ICBO ICEO IEBO hFE fT 700 Blue 80~120 700 Purple 120~180 hFE Colored: Color Orange 25~40 hFE Outline and Dimensions: Contact:Jiandong Lei Tel.:+86-917-6293906 Fax:+86-917-6297928 [email protected] 245 ...