NUS3116MT
Main Switch Power MOSFET and Dual Charging BJT
−12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Tra...
NUS3116MT
Main Switch Power MOSFET and Dual Charging BJT
−12 V, −6.2 A, Single P−Channel with Dual
PNP low Vce(sat)
Transistors, 3x3 mm WDFN Package
This device integrates one high performance power MOSFET and two low Vce(sat)
transistors, greatly reducing the layout space and optimizing charging performance in the battery−powered portable electronics.
Features
High Performance Power MOSFET Dual−Low Vce(sat)
Transistors as Charging Power Mux 3.0x3.0x0.8 mm WDFN Package Independent Pin−out Provides Circuit Flexibility Low Profile (<0.8 mm) for Easy Fit in Thin Environments This is a Pb−Free Device
Applications
Main Switch and Battery Charging Mux for Portable Electronics Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
1 2 3
D
8 C
7
6
www.onsemi.com
V(BR)DSS −12 V
MOSFET RDS(on) TYP 32 mW @ −4.5 V 44 mW @ −2.5 V
ID MAX −6.2 A
Low Vce(sat)
PNP (Wall)
VCEO MAX
VEBO MAX
IC MAX
−30 V
−8.0 V
−2.0 A
Low Vce(sat)
PNP (USB)
VCEO MAX
VEBO MAX
IC MAX
−30 V
−8.0 V
−2.0 A
8
1
DFN8 CASE 506BC
MARKING DIAGRAM
1 3116 AYWW G G
3116 = Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
4
5
DFN8 3x3 Pin Connections (Top View)
Figure 1. Simple Schematic
ORDERING INFORMATION
Device
Package
Shipping†
NUS3116MTR2G WDFN8 3000/Tape & Reel (Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Ta...
