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2SB1392

Hitachi Semiconductor

Silicon PNP Transistor

2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Colle...



2SB1392

Hitachi Semiconductor


Octopart Stock #: O-70512

Findchips Stock #: 70512-F

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2SB1392 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Tj Tstg 1 Ratings –70 –60 –5 –4 –8 2 25 150 –55 to +150 Unit V V V A A W °C °C 2SB1392 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min –70 –60 –5 — — 2 Typ — — — — — — — — — — Max — — — –10 –10 200 — –1.0 –1.0 –1.2 Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –50 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –50 V, IE = 0 VCE = –50 V, RBE = ∞ VCE = –4 V, IC = –1 A*1 VCE = –4 V, IC = –0.1 A*1 VCE = –4 V, IC = –1 A*1 I C = –2.0 A, IB = –0.2 A*1 I C = –2.0 A, IB = –0.2 A*1 Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current V(BR)EBO I CBO I CEO DC current transfer ratio hFE1* hFE2 Base to emitter voltage Collector to emitter saturation voltage Base to emitter saturation voltage VBE VCE(sat) VBE(sat) 60 35 — — — V V V Notes: 1. Pulse test. 2. The 2SB1392 is grouped by hFE1 as follows. B 60 to 120 C 100 to 200 Maximum Collector Dissipation Curve 30 Collector power dissipation Pc (W) –10 –5 Collector Current IC (A) 20 iC (peak) ...




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