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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS404A/D
Chopper Transistor
PNP Si...
www.DataSheet.co.kr
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS404A/D
Chopper
Transistor
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPS404A
Motorola Preferred Device
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value –35 –40 –25 –150 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C
1 2 3
CASE 29–04, STYLE 1 TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA(1) Rq JC Max 200 83.3 Unit °C/W °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –10 m Adc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 m Adc, IC = 0) Collector Cutoff Current (VCB = –10 Vdc, IE = 0) Emitter Cutoff Current (VBE = –10 Vdc, IC = 0) 2. Pulse Test: Pulse Width V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO –35 –40 –25 — — — — — –100 –100 Vdc Vdc Vdc nAdc nAdc
v 300 m s, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal
Transistor...