2SB1409(L)/(S)
Silicon PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
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2SB1409(L)/(S)
Silicon
PNP Epitaxial
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
DPAK
4 4
1
2
3 12
S Type
3
1. Base 2. Collector 3. Emitter 4. Collector
L Type
2SB1409(L)/(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg
1
Ratings –180 –160 –5 –1.5 –3 18 150 –55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min –180 –160 –5 —
1
Typ — — — — — — — — 240 25
Max — — — –10 200 — –1 –1.5 — —
Unit V V V µA
Test conditions I C = –1 mA, IE = 0 I C = –10 mA, RBE = ∞ I E = –1 mA, IC = 0 VCB = –160 V, IE = 0 VCE = –5 V, IC = –150 mA*2 VCE = –5 V, IC = –500 mA*2
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio V(BR)EBO I CBO hFE1* hFE2 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance VCE(sat) VBE fT Cob
60 30 — — — —
V V MHz pF
I C = –500 mA, IB = –50 mA VCE = –5 V, IC = –150 mA VCE = –5 V, IC = –150 mA VCB = –10 A, IE = 0, f = 1 MHz
Notes: 1. The 2SB1409(L)/(S) is grouped by h FE1 as follows. B 60 to 120 C 100 to 200
2. Pulse test.
2
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