N-Channel Enhancement Mode Power MOSFET
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2N4003K
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Low Gate Vol...
Description
www.DataSheet.co.kr
2N4003K
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
1 GATE 3 DRAIN
*
* Low Gate Voltage Threshold Vgs(th) to Facilitate Drive Circuit Design. * Low Gate Charge for Fast Switching. * ESD Protected Gate. * Minimum Breakdown Voltage Rating of 30V.
Features:
* Gate Pretection Diode
SOURCE 2
DRAIN CURRENT 0.5 AMPERES DRAIN SOUCE VOLTAGE 30 VOLTAGE
3 1 2
Application:
* Level Shifters * Level Switches * Low Side Load Switches * Portable Applications
SOT-23
Maximum Ratings(TA=25℃
Rating
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 ,Steady State
Unless Otherwise Specified) Symbol
V DS VG S
Value
30 ±20 0.5 0.37 0.69 0.56 0.40 0.83 1.7 180 150 300 +150 -55~+150 1.0 260
Unit
V
(TA=25°C) (TA=85°C)
ID PD
A W A W A °C /W °C °C A °C
Power Dissipation1
,Steady State (TA=25°C) (TA=85°C)
Continuous Drain Current 1 ,t<10s
ID PD IDM
Power Dissipation1 Pulsed Drain Current
,t<5s
Maximum Junction-ambient
,Steady State1 ,t<10s1 ,Steady State2
R θJA TJ Tstg IS TL
Operating Junction Temperature Range Storage Temperature Range Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case 10s)
Note: 1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface−mounted on FR4 board using the minimum recommended pad size.
Device Marking
2N4003K = TR8
WEITRON
http://www.weitron.com.tw
1/6
08-Sep-09
Datasheet pdf - http://www.DataSheet4U.net/
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