Power Transistors
2SB1418, 2SB1418A
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary ...
Power
Transistors
2SB1418, 2SB1418A
Silicon
PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2138 and 2SD2138A
13.0±0.2 4.2±0.2
Unit: mm
5.0±0.1 10.0±0.2 1.0
s Features
q q q
High foward current transfer ratio hFE High-speed switching Allowing automatic insertion with radial taping (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –4 –2 15 2.0 150 –55 to +150 Unit V
90°
2.5±0.2
1.2±0.1
C1.0 2.25±0.2
18.0±0.5 Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1418 2SB1418A 2SB1418 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.35±0.1
0.65±0.1 1.05±0.1 0.55±0.1
0.55±0.1
C1.0
1 2 3
emitter voltage 2SB1418A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
2.5±0.2 2.5±0.2
V A A W ˚C ˚C
B
1:Base 2:Collector 3:Emitter MT4 Type Package
Internal Connection
C
E
s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1418 2SB1418A 2SB1418 2SB1418A 2SB1418 2SB1418A
(TC=25˚C)
Symbol ICBO ICEO IEBO VCEO hFE1 hFE2* VBE VCE(sat) fT ton toff Conditions VCB = –60V, IB = 0 VCB = –80V, IB = 0 VCE = –30V, IB = 0 VCE = –40V, IB = 0 VEB = –5V, IC = 0 IC = –30mA, IB = 0 VCE = –4V, IC = –1A VCE = –4V, IC = –2A VCE = –4V, IC = –2A IC = –2A, IB = –8mA VCE = –10V, IC = – 0.5A, f = 1MHz IC = –2A, IB1 = –8mA, IB2 = 8mA, VCC = –50V 20 0.2 2 –60...
