6673BZ Datasheet: FDS6673BZ





6673BZ FDS6673BZ Datasheet

Part Number 6673BZ
Description FDS6673BZ
Manufacture Fairchild Semiconductor
Total Page 6 Pages
PDF Download Download 6673BZ Datasheet PDF

Features: www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FD S6673BZ P-Channel PowerTrench® MOSFET -30V, -14.5A, 7.8mΩ General Descripti on This P-Channel MOSFET is produced us ing Fairchild Semiconductor’s advance d Power Trench process that has been es pecially tailored to minimize the on-st ate resistance. This device is well sui ted for Power Management and load switc hing applications common in Notebook Co mputers and Portable Battery Packs. Fe atures „ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A „ Max rDS(on) = 12m , VGS = -4.5V, ID = -12A „ Extended VGS range (-25V) for battery applicatio ns „ HBM ESD protection level of 6.5kV typical (note 3) „ High performance t rench technology for extremely low rDS( on) „ High power and current handling capability „ RoHS compliant D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 MOSFET Maximum Ratings TA = 25°C unle ss otherwise noted Symbol VDS VGS ID PD TJ, TSTG Operating and Storage Temperature Parameter Drain to Source Voltage Gat.

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www.DataSheet.co.kr
January 2006
FDS6673BZ
P-Channel PowerTrench® MOSFET
-30V, -14.5A, 7.8m
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench process that
has been especially tailored to minimize the on-state
resistance.
This device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
Features
„ Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A
„ Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A
„ Extended VGS range (-25V) for battery applications
„ HBM ESD protection level of 6.5kV typical (note 3)
„ High performance trench technology for extremely low
rDS(on)
„ High power and current handling capability
„ RoHS compliant
DD
D
D
SO-8
S SSG
5
6
7
8
4
3
2
1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current -Continuous
-Pulsed
(Note1a)
Power Dissipation for Single Operation
(Note1a)
PD (Note1b)
(Note1c)
TJ, TSTG
Operating and Storage Temperature
Ratings
-30
±25
-14.5
-75
2.5
1.2
1.0
-55 to 150
Units
V
V
A
A
W
°C
Thermal Characteristics
RθJA
RθJC
Thermal Resistance , Junction to Ambient (Note 1a)
Thermal Resistance , Junction to Case (Note 1)
50 °C/W
25 °C/W
Package Marking and Ordering Information
Device Marking
FDS6673BZ
Device
FDS6673BZ
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
©2006 Fairchild Semiconductor Corporation
FDS6673BZ Rev. B
1
www.fairchildsemi.com
Datasheet pdf - http://www.DataSheet4U.net/

                 






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