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2SJ527(L),2SJ527(S)
Silicon P Channel MOS FET High Speed Power Switching
ADE-208-640A (Z) 2nd. Edition Jun 1998 Features
• Low on-resistance R DS(on) = 0.3 Ω typ. • Low drive current • 4 V gete drive devices • High speed switching
Outline
DPAK-1
4
4
D 1 2 G 3
S
1 2
3
1. Gate 2. Drain 3. Source 4. Drain
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2SJ527(L),2SJ527(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalenche current Avalenche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP
Note3 Note3 Note2 Note1
Ratings –60 ±20 –5 –20 –5 –5 2.1 20 150 –55 to +150
Unit V V A A A A mJ W °C °C
EAR
Pch Tch
Tstg
1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test Symbol Min V(BR)DSS V(BR)GSS I DSS I GSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr –60 ±20 — — –1.0 — — 1.8 — — — — — — — — — Typ — — — — — 0.3 0.5 3 220 110 35 10 30 45 35 –1.35 55 Max — — –10 ±10 –2.0 0.4 0.8 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = –5A, VGS = 0 I F = –5A, VGS = 0 diF/ dt = 50A/µs Test Conditions I D = –10mA, VGS = 0 I G = ±100µA, VDS = 0 VDS = –60 V, VGS = 0 VGS = ±16V, VDS = 0 I D = –1mA, VDS = –10V I D = –3A, VGS = –10V Note4 I D = –3A, VGS = –4V Note4 I D = –3A, VDS = –10V VDS = –10V VGS = 0 f = 1MHz VGS = –10V, ID = –3A RL = 10Ω
Note4
2
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2SJ527(L),2SJ527(S)
Main Characteristics
Power vs. Temperature Derating 40 Pch (W) I D (A) Maximum Safe Operation Area
–100 –50
10
10
PW
30
–20 –10 –5 –2 –1 –0.5
0 µs
µs
Channel Dissipation
Drain Current
20
D
=
1 s m
C
10
0
50
100
150 Tc (°C)
200
Case Temperature
–0.2 Ta = 25 °C –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 Drain to Source Voltage V DS (V)
pe s (1 ra sh (T tion ot) c Operation in =2 5° this area is C limited by R DS(on) )
O
10
m
–10 V –5 –8 V I D (A) –4
Typical Output Characteristics –5 V –6 V –5 –4 V (A) Pulse Test –3.5 V –4
Typical Transfer Characteristics V DS = –10 V Pulse Test
–3
ID Drain Current
–3
Drain Current
–2 –3 V –1 VGS = –2.5 V 0 –2 –4 –6 Drain to Source Voltage –8 –10 V DS (V)
–2 –25°C Tc = 75°C 25°C 0 –1 –2 –3 Gate to Source Voltage –4 –5 V GS (V)
–1
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3
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