2SB1440

Transistor 2SB1440 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2185 Unit: mm s Features q q 4.5±0.1 1.6±0.2 1.5±0.1 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 4.0–0.20 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings –50 –50 –5 –3 –2 1* 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 0.5±0.08 1.5±0.1 3.0±0.15 3 2 1 0.4±0.04 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1I Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob * Conditions IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –200mA VCE = –2V, IC = –1A IC = –1A, IB = –50mA...