2SB1454

Ordering number:EN3249 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1454/2SD2202 High-Current Switching Applications Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting. Package Dimensions unit:mm 2041A [2SB1454/2SD2202] ( ) : 2SB1454 Specifications 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25˚C (–)90 (–)80 (–)6 (–)5 (–)9 2.0 25 150 –55 to +150 V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage ICBO IEBO hFE1 hFE2 fT VCE(sat) VCB=(–)80V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)1A VCE=(–)2V, IC=(–)3A VCE=(–)5V, IC=(–)1A IC=(–)3A, IB=(–)0.3A Ratings min typ 70* 30 20 max (–)0.1 (–)0.1 280* 0.4 (–0.5) Unit mA mA MHz V V * : The 2SB1454/2SD2202 are classified by 1A hFE as follows : 70 Q 140 100 R 200 140 S 280 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s...