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MT29F1G08ABCHC Dataheets PDF



Part Number MT29F1G08ABCHC
Manufacturers Micron Technology
Logo Micron Technology
Description NAND Flash Memory
Datasheet MT29F1G08ABCHC DatasheetMT29F1G08ABCHC Datasheet (PDF)

www.DataSheet.co.kr Micron Confidential and Proprietary 1Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks • Asynchronous.

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www.DataSheet.co.kr Micron Confidential and Proprietary 1Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F1G08AACWP, MT29F1G08AACH4 MT29F1G08ABCHC, MT29F1G16ABCHC, MT29F1G08ABCH4, MT29F1G16ABCH4 Features • Open NAND Flash Interface (ONFI) 1.0-compliant1 • Single-level cell (SLC) technology • Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks • Asynchronous I/O performance – tRC/tWC: 25ns (3.3V), 35ns (1.8V) • Array performance – Read page: 25µs – Program page: 250µs (TYP, 3.3V) – Program page: 250µs (TYP, 1.8V) – Erase block: 500µs (TYP) • Command set: ONFI NAND Flash Protocol • Advanced command set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Block lock (1.8V only) – Boot block (1.8V only) – Programmable drive strength – Read unique ID – Internal data move • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status • Internal data move operations supported within the device from which data is read • Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion • WP# signal: write protect entire device • Blocks 0–7 (block address 00h-07h) guaranteed to be valid with ECC when shipped from factory (3.3V only); see Error Management (page 83). • Blocks 0–3 (block address 00h-03h) guaranteed to be valid with ECC when shipped from factory (1.8V only); see Error Management (page 83). • RESET (FFh) required as first command after poweron • Alternate method of device initialization (Nand_Init) after power up3 (contact factory) • Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles • Operating Voltage Range – VCC: 2.7–3.6V – VCC: 1.65–1.95V • Operating temperature: – Commercial: 0°C to +70°C – Extended (ET): –40ºC to +85ºC • Package – 48-pin TSOP type 1, CPL2 – 63-ball VFBGA Notes: 1. The ONFI 1.0 specification is available at www.onfi.org. 2. CPL = Center parting line. 3. Available only in 1.8V VFBGA package. PDF:09005aef83c2e425 1gb_nand_m58a.pdf – Rev. D 1/10 EN 1 Products and specifications discussed herein are subject to change by Micron without notice. Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Micron Confidential and Proprietary 1Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Micron’s part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 1G 08 Micron Technology.


MT29F1G08AACH4 MT29F1G08ABCHC MT29F1G16ABCHC


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