Document
2SK2746
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2746
DC−DC Converter and Motor Drive Applications
z Low drain−source ON resistance
: RDS (ON) = 1.3 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 5.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 640 V)
z Enhancement mode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS VDGR VGSS
ID IDP PD
EAS
IAR EAR Tch Tstg
800
V
800
V
±30
V
7
A
21
A
150
W
673
mJ
7
A
15
mJ
150
°C
−55 to 150
°C
1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case Thermal resistance, channel to ambient
Rth (ch−c) Rth (ch−a)
0.833 50
°C / W °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 24.9 mH, RG = 25 Ω, IAR = 7 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance
IGSS V (BR) GSS
IDSS V (BR) DSS
Vth RDS (ON)
|Yfs| Ciss Crss Coss
VGS = ±30 V, VDS = 0 V IG = ±10 μA, VDS = 0 V VDS = 640 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 3.5 A VDS = 20 V, ID = 3.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
2SK2746
Min Typ. Max Unit
—
—
±10
μA
±30 —
—
V
—
—
100
μA
800
—
—
V
2.0
—
4.0
V
—
1.3 1.7
Ω
1.25 5.0
—
S
— 1500 —
—
30
—
pF
— 140 —
—
35
—
Turn−on time
ton
Switching time
Fall time
tf
—
80
—
ns
—
50
—
Turn−off time
Total gate charge (gate−source plus gate−drain) Gate−source charge Gate−drain (“miller”) Charge
toff
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 7 A
Qgd
— 220 —
—
55
—
—
30
—
nC
—
25
—
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current (Note 1)
Pulse drain reverse current (Note 1)
Forward voltage (diode) Reverse recovery time Reverse recovery charge
Symbol
IDR
IDRP VDSF
trr Qrr
Test Condition
Min Typ. Max Unit
—
—
—
7
A
—
—
—
21
A
IDR = 7 A, VGS = 0 V
—
—
−1.9
V
— 1300 —
ns
IDR = 7 A, VGS = 0 V, dIDR / dt = 100 A / μs
—
14
—
μC
Marking
TOSHIBA
K2746
Part No. (or abbreviation code) Lot No.
Note 4
Note 4: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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2SK2746
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2SK2746
RG = 25 Ω VDD = 90 V, L = 24.9 mH
EAS
=
1 2
⋅ L ⋅ I2
⋅ ⎜⎛ ⎝
BVDSS BVDSS − VDD
⎟⎞ ⎠
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2SK2746
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduc.