Document
Transistor
2SB1463
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification Complementary to 2SD2240
1.6±0.15
Unit: mm
s Features
q q q
0.4
0.8±0.1
0.4
High collector to emitter voltage VCEO. Low noise voltage NV. SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C)
Ratings –150 –150 –5 –100 –50 125 125 –55 ~ +125 Unit V V V mA mA mW ˚C ˚C
1.6±0.1
1.0±0.1
0.5
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Emitter 3:Collector
EIAJ:SC–75 SS–Mini Type Package
Marking symbol :
I
s Electrical Characteristics
Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Noise voltage
(Ta=25˚C)
Symbol ICBO VCEO VEBO hFE fT Cob NV
*
Conditions VCB = –100V, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA VCB = –10V, IE = 10mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB, Rg = 100kΩ, Function = FLAT
min
typ
0 to 0.1
0.2±0.1
max –1
0.15–0.05
+0.1
s Absolute Maximum Ratings
0.2–0.05
+0.1
Unit µA V V
–150 –5 130 450 –1 200 4 150
VCE(sat)
V MHz pF mV
*h
FE
Rank classification
Rank hFE Marking Symbol R 130 ~ 220 IR S 185 ~ 330 IS T 260 ~ 450 IT
1
Transistor
PC — Ta
150 –100 Ta=25˚C –90 125 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –100 25˚C Ta=75˚C –80
2SB1463
IC — VCE
–120 VCE=–5V
IC — VBE
Collector power dissipation PC (mW)
Collector current IC (mA)
100
–70 –60 –50 –40 –30 –20 –10
75
Collector current IC (mA)
–80
–25˚C
–60
50
–2mA
–40
25
–1mA
–20
0 0 20 40 60 80 100 120 140 160
0 0 –2 –4 –6 –8 –10 –12
0 0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
–100 –30 –10 –3 –1 Ta=75˚C 25˚C –25˚C IC/IB=10 600
hFE — IC
250 VCE=–5V 225 500
fT — I E
VCB=–10V Ta=25˚C
Forward current transfer ratio hFE
Transition frequency fT (MHz)
–10 –30 –100
200 175 150 125 100 75 50 25
400 Ta=75˚C 300
25˚C –25˚C
– 0.3 – 0.1 – 0.03 – 0.01 – 0.1 – 0.3
200
100
–1
–3
–10
–30
–100
0 – 0.1 – 0.3
–1
–3
0 0.1
0.3
1
3
10
30
100
Collector current IC (mA)
Collector current IC (mA)
Emitter current IE (mA)
Cob — VCB
10
Collector output capacitance Cob (pF)
9 8 7 6 5 4 3 2 1 0 –1
IE=0 f=1MHz Ta=25˚C
–3
–10
–30
–100
Collector to base voltage VCB (V)
2
.