IRFHS9351PBF

www.DataSheet.co.kr PD - 97572B IRFHS9351PbF HEXFET® Power MOSFET VDS VGS max RDS(on) max (@VGS = -10V) -30 ±20 170 -3.4 V V mΩ A S1 1 T OP VIEW 6 D1 D1 S2 5 G2 G2 D1 D1 D2 ID (@TC = 25°C) d G1 2 FET 1 D2 3 FET 2 D2 4 S2 D2 G1 S1 2mm x 2mm Dual PQFN Applications l l Charge and Discharge Switch for Battery Application System/load switch Features and Benefits Features Low RDSon (≤ 170mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0 mm) results in Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Consumer Qualification Orderable part number IRFHS9351TRPBF IRFHS9351TR2PBF Package Type PQFN 2mm x 2mm PQFN 2mm x 2mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Power Density Easier Manufacturing Environmentally Friendlier Increased Reliability Note Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TA = 25°C PD @ TA = 70°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Power Dissipation Power Dissipation Max. -30 ± 20 -2.3 -1.5 -5.1 -4.1 -3.4 -20 1.4 0.9 Units V f f c d d d A ...