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2SA1357
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applicati...
www.DataSheet.co.kr
2SA1357
TOSHIBA
Transistor Silicon
PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applications Audio Power Amplifier Applications
Unit: mm
hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −35 −20 −8 −5 −8 −1 1.5 10 150 −55 to 150 A Unit V V V
JEDEC JEITA TOSHIBA
― ― 2-8H1A
A W °C °C
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max) Duty cycle = 30% (max) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated ...