2SB1481

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) Complementary to 2SD2241 Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current DC IC ±4 A Pulse ICP ±6 Base current IB −0.3 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 4.5 kΩ ≈ 300 Ω Emitter 1 http://store.iiic.cc/ 2006-11-21 Electrical Characteristics (Tc = 25°C) 2SB1481 Characteristics Co...