2SB1488

Transistor 2SB1488 Silicon PNP triple diffusion planer type Unit: mm For power switching 0.15 6.9±0.1 0.7 4.0 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.5 4.5±0.1 s Features q q q q High foward current transfer ratio hFE. High-speed switching. High collector to base voltage VCBO. Allowing supply with the radial taping. (Ta=25˚C) Ratings –400 –400 –7 –1 – 0.5 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 0.65 max. 1.0 1.0 0.2 0.45–0.05 0.45–0.05 +0.1 +0.1 2.5±0.5 2.5±0.5 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * 1 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package 1.2±0.1 0.65 max. 0.1 0.45+ – 0.05 Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.5±0.1 (HW type) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Collector current fall time Collector output capacitance *1h FE1 (Ta=25˚C) Symbol ICBO ICEO IEBO VCEO hFE1*1 hFE2 VCE(sat) VBE(sat) fT ton t...