isc Silicon NPN Power Transistor
2SC4007
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A ·...
isc Silicon
NPN Power
Transistor
2SC4007
DESCRIPTION ·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction Temperature
6
A
40 W
2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
2SC4007
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB= 0.2A
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE
DC Current Gain
IC= 1A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IE= -0.2A ; V...