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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4007
DESCR...
www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
2SC4007
DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
w w
s c s i . w
VALUE 100 V 80 V 6 V 4 A 6 A 40 W
UNIT
n c . i m e
IC
Collector Current-Continuous
ICM
Collector Current-Peak Collector Power Dissipation @ TC=25℃
PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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www.DataSheet.co.kr
INCHANGE Semiconductor
isc Product Specification
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A
B
2SC4007
MIN 100 80 6
TYP.
MAX
UNIT V V V
1.0 1.5 10 10...