K2382 Datasheet: 2SK2382





K2382 2SK2382 Datasheet

Part Number K2382
Description 2SK2382
Manufacture Toshiba Semiconductor
Total Page 6 Pages
PDF Download Download K2382 Datasheet PDF

Features: www.DataSheet.co.kr 2SK2382 TOSHIBA Fie ld Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2382 Switching Regulator, DC−DC Converter and Motor Drive Applications z Low drain−sourc e ON resistance z High forward transfer admittance z Low leakage current z Enh ancement mode : RDS (ON) = 0.13 Ω (ty p.) : |Yfs| = 17 S (typ.) Unit: mm : I DSS = 100 μA (max) (VDS = 200 V) : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) A bsolute Maximum Ratings (Ta = 25°C) Ch aracteristics Drain−source voltage Dr ain−gate voltage (RGS = 20 kΩ) Gate −source voltage Drain current DC (Not e 1) Symbol VDSS VDGR VGSS ID IDP PD EA S IAR EAR Tch Tstg Rating 200 200 ±20 15 45 45 166 15 4.5 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Not e 1) Drain power dissipation (Tc = 25 C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalan che energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy lo.

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2SK2382
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2382
Switching Regulator, DCDC Converter and Motor Drive
Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0.13 (typ.)
z High forward transfer admittance : |Yfs| = 17 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 200 V)
z Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
200
200
±20
15
45
45
166
15
4.5
150
55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
2.78 °C / W
62.5 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.2 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2006-11-21
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