AT29LV040A

www.DataSheet.co.kr Features Single Voltage, Range 3V to 3.6V Supply 3-volt Only Read and Write Operation Software Protected Programming Fast Read Access Time – 150 ns Low Power Dissipation – 15 mA Active Current – 50 µA CMOS Standby Current Sector Program Operation – Single Cycle Reprogram (Erase and Program) – 2048 Sectors (256 Bytes/Sector) – Internal Address and Data Latches for 256 Bytes Two 16K Bytes Boot Blocks with Lockout Fast Sector Program Cycle Time – 20 ms Max Internal Program Control and Timer DATA Polling for End of Program Detection Typical Endurance > 10,000 Cycles CMOS and TTL Compatible Inputs and Outputs Green (Pb/Halide-free) Packaging Option 4-megabit (512K x 8) 3-volt Only 256-byte Sector Flash Memory AT29LV040A 1. Description The AT29LV040A is a 3-volt only in-system Flash Programmable and Erasable Read Only Memory (PEROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS EEPROM technology, the device offers access times to 150 ns, and a low 54 mW power dissipation. When the device is deselected, the CMOS standby current is less than 50 µA. The device endurance is such that any sector can typically be written to in excess of 10,000 times. The programming algorithm is compatible with other devices in Atmel’s 3-volt only Flash memories. To allow for simple in-system reprogrammability, the AT29LV040A does not require high input voltages for programming. Thr...