2SJ629
www.DataSheet.co.kr
Ordering number : EN9084A
2SJ629
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
P-Channel S...
Description
www.DataSheet.co.kr
Ordering number : EN9084A
2SJ629
www.DataSheet4U.com
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629
Features
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --4.5 --18 1.3 3.5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-12V, VGS=0V VGS=±6.4V, VDS=0V VDS=-6V, ID=--1mA VDS=-6V, ID=--2.2A ID=--2.2A, VGS=-4.5V ID=--1.1A, VGS=-2.5V ID=--0.5A, VGS=-1.8V VDS=-6V, f=1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --12 --10 ±10 --0.3 3.4 5.7 ...
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