2SB1560

Darlington 2SB1560 (70Ω) E B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2390) Application : Audio, Series Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit VCBO –160 V ICBO VCB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA VEBO –5 V V(BR)CEO IC=–30mA –150min V IC –10 A hFE VCE=–4V, IC=–7A 5000min∗ IB –1 A VCE(sat) IC=–7A, IB=–7mA –2.5max V PC 100(Tc=25°C) W VBE(sat) IC=–7A, IB=–7mA –3.0max V Tj 150 °C fr VCE=–12V, IE=2A 50typ MHz Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 230typ pF ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) –70 10 –7 –10 5 –7 7 0.8typ 3.0typ 1.2typ 20.0min 4.0max 19.9±0.3 4.0 2.0 1.8 5.0±0.2 15.6±0.4 9.6 4.8±0.2 2.0±0.1 a ø3.2±0.1 b 2 3 1.05 +-00..12 0.65 +0.2 -0.1 5.45±0.1 5.45±0.1 BCE 1.4 Weight : Approx 6.0g a. Part No. b. Lot No. DC Current Gain hFE Collector Current IC(A) –10mA I C– V CE Characteristics (Typical) –10 –2 .5 mA –2 . 0 m A –1.5mA –8 –1.2mA –1.0mA –6 –0.8mA –0.6mA –4 IB=–0.4mA –2 0 0 –2 –4 –6 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Cha...