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Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated Transistors
2SB764
TO-92MOD
1. EMI...
www.DataSheet.co.kr
Transys
Electronics
L I M I T E D
TO-92MOD Plastic-Encapsulated
Transistors
2SB764
TO-92MOD
1. EMITTER 2. COLLECTOR 3. BASE
TRANSISTOR (
PNP)
FEATURES Power dissipation PCM: 0.9 W (Tamb=25℃)
Collector current -1 A ICM: Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE
sat
123
unless otherwise specified)
Test conditions MIN TYP MAX UNIT V V V
Ic=-10µA, IE=0 Ic=-1mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz
-60 -50 -5 -1 -1 60 30 -0.7 -1.2 150 20 320
µA µA
V V MHz pF
fT
Cob
CLASSIFICATION OF hFE(1) Rank Range D 60-120 E 100-200 F 160-320
Datasheet pdf - http://www.DataSheet4U.net/
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