2SB1580 / 2SB1316 / 2SB1567
Transistors
Power Transistor (−100V , −2A)
2SB1580 / 2SB1316 / 2SB1567
!Features 1) Darling...
2SB1580 / 2SB1316 / 2SB1567
Transistors
Power
Transistor (−100V , −2A)
2SB1580 / 2SB1316 / 2SB1567
!Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2195 / 2SD1980 / 2SD2398. !External dimensions (Units : mm)
2SB1580
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SB1580 Collector power dissipation 2SB1316 2SB1567 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits −100 −100 −8 −2 −3 2 1 10 2 20 150 −55∼+150 Unit V V V A(DC) A(Pulse) W W(Tc=25°C) W W(Tc=25°C) °C °C
ROHM : MPT3 EIAJ : SC-62
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
∗1 ∗2
2SB1316
0.75
0.4
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65 2.3
Junction temperature Storage temperature
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
1.0 0.5
0.5
1.5 2.5 9.5
ROHM : CPT3 EIAJ : SC-63
!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
∗ Denotes hFE
15.0 12.0 8.0
2SB1580 MPT3 1k ∼ 10k BN∗ T100 1000
2SB1316 CPT3 1k ∼ 10k − TL 2500
2SB1567 TO-220FN 1k ∼ 10k − − 500
2SB1567
10.0
2.3
0.8Min.
5.1 6.5
C0.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
4.5
φ 3.2
2.8
5.0
1.2
!Circuit schematic
C
14.0
1.3 0.8
2.54
2.54
(1) (2) (3) (1) (2) (3)
0.75
2.6...
