P1403EVG

www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor D PRODUCT SUMMARY V(BR)DSS -30 RDS(ON) 14mΩ ID -11 Halogen-Free & Lead-Free G S 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless O PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation L = 0.1mH TA = 25 °C TA = 70 °C 1 therwise Noted) SYMBOL VDS VGS 100% UIS tested LIMITS -30 ±25 -11 -9 -50 -43 90 2.5 1.6 -55 to 150 mJ W A UNITS V V TA = 25 °C TA = 70 °C ID IDM IAS EAS PD Tj, Tstg Operating Junction & Storage Temperature Range °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 SYMBOL RθJc RθJA TYPICAL MAXIMUM 25 50 UNITS °C / W °C / W Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±25V VDS = -24V, VGS = 0V VDS = -20V, VGS = 0V, TJ = 125 °C -30 -1 -1.7 -3 ±100 -1 -10 µA nA V LIMITS UNIT MIN TYP MAX REV 1.3 1 Jun-22-2010 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr NIKO-SEM P-Channel Logic Level Enhancement Mode P1403EVG SOP-8 Field Effect Transistor Halogen...