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2SB1570 Dataheets PDF



Part Number 2SB1570
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SB1570 Datasheet2SB1570 Datasheet (PDF)

(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1570 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz 2SB1570 –100max –100max –150min 5000min∗ –2.5max –3.0max 50typ 230typ V V MHz pF 20.0min 4.0max B Equivalent .

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(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1570 –160 –150 –5 –12 –1 150(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1570 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–160V VEB=–5V IC=–30mA VCE=–4V, IC=–7A IC=–7A, IB=–7mA IC=–7A, IB=–7mA VCE=–12V, IE=2A VCB=–10V, f=1MHz 2SB1570 –100max –100max –150min 5000min∗ –2.5max –3.0max 50typ 230typ V V MHz pF 20.0min 4.0max B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 µA µA V a b 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –70 RL (Ω) 10 IC (A) –7 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –7 IB2 (mA) 7 ton (µs) 0.8typ tstg (µs) 3.0typ tf (µs) 1.2typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) –12 V CE ( sat ) – I B Characteristics (Typical) –3 I C – V BE Temperature Characteristics (Typical) –12 (V C E =–4V) 0 –1 –10 Collector Current I C (A) m A –2 .0 m A –2 .0m A –1.5 mA –10 Collector Current I C (A) –8 –1.2m A –2 –8 –1.0 mA –6 –0.8m A –10A –7A I C =–5A –1 –6 mp) e Te (Cas –4 125˚C (Cas 25˚C –2 –2 0 0 –2 –4 –6 0 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 –30˚C (Case I B =–0.4mA –4 e Te mp) Temp ) –0.6mA –2 –2.5 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) (V C E =–4V) 40,000 D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 50000 125˚C (V C E =–4V) θ j- a ( ˚C/W) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 2 Transient Thermal Resistance Typ 25˚C 10000 –30˚C 5000 1 10,000 5,000 0.5 0.1 1,000 –0.2 –0.5 –1 Collector Current I C (A) –5 –10–12 1000 800 –0.2 –0.5 –1 Collector Current I C (A) –5 –10 –12 1 5 10 50 100 500 1000 2000 Time t(ms) f T – I E Characteristics (Typical) (V C E =–12V) 100 –30 Safe Operating Area (Single Pulse) 160 P c – T a Derating Cut- off F re quen cy f T (MH Z ) 80 Collecto r Cur rent I C (A) –10 –5 10 m s 0m M aximu m Power Dissip ation P C (W) 10 DC s 120 W ith In fin 60 Typ ite he –1 –0.5 Without Heatsink Natural Cooling –0.1 80 at si nk 40 40 20 0 0.02 0.05 0.1 0.5 1 5 10 –0.05 –3 –5 –10 –50 –100 –200 5 0 Without Heatsink 0 25 50 75 100 125 150 Emitter Current I E (A) Collector-Emitter Voltage V C E (V) Ambient Temperature Ta(˚C) 48 .


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