2SB1571

DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1571 PNP SILICON EPITAXIAL TRANSISTOR FEATURES Low VCE(sat): VCE(sat)1 ≤ −0.35 V Complementary to 2SD2402 PACKAGE DRAWING (Unit: mm) 4.5±0.1 1.6±0.2 1.5±0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −50 Collector to Emitter Voltage VCEO −30 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) IC(DC) −5.0 Note1 Collector Current (pulse) IC(pulse) −8.0 Base Current (DC) IB(DC) −0.2 Note1 Base Current (pulse) IB(pulse) −0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 16 cm x 0.7 mm V V V A A A A W °C °C 0.8 MIN. E 0.42 ±0.06 1.5 C B 0.47 ±0.06 3.0 0.42 ±0.06 0.41 +0.03 –0.05 E: Emitter C: Collector (Fin) B: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain Note SYMBOL ICBO IEBO hFE1 hFE2 TEST CONDITIONS VCB = −50 V, IE = 0 VEB = −6.0 V, IC = 0 VCE = −1.0 V, IC = −1.0 A VCE = −1.0 V, IC = −2.0 A VCE = −1.0 V, IC = −0.1 A IC = −3.0 A, IB = −0.15 A IC = −5.0 A, IB = −0.25 A IC = −3.0 A, IB = −0.15 A VCE = −10 V, IE = 0.5 A VCB = −10 V, IE = 0, f = 1.0 MHz IC = −2.0 A, VCC = −10 V, RL = 5.0 Ω, IB1 = −IB2 = −0.1 A, MIN. TYP. MAX. −100 −100 UNIT nA nA − 80 100 −0.6 200 −0.665 −0.17 −0.28 −0.89 150 100 265 350 50 400 −0.7 −0.35 −0.55 −1.2 Base to Emitter Voltage Note ...