DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low VCE(sat): VCE(sat...
DATA SHEET
PNP SILICON EPITAXIAL
TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL
TRANSISTOR
FEATURES
Low VCE(sat): VCE(sat)1 ≤ −0.4 V Complementary to 2SD2403
PACKAGE DRAWING (Unit: mm)
4.5±0.1 1.6±0.2 1.5±0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage VCBO −80 Collector to Emitter Voltage VCEO −60 Emitter to Base Voltage VEBO −6.0 Collector Current (DC) IC(DC) −3.0 Note1 Collector Current (pulse) IC(pulse) −5.0 Base Current (DC) IB(DC) −0.2 Note1 Base Current (pulse) IB(pulse) −0.4 Note2 Total Power Dissipation PT 2.0 Junction Temperature Tj 150 Storage Temperature Range Tstg –55 to + 150 Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2 2. When mounted on ceramic substrate of 16 cm x 0.7 mm V V V A A A A W °C °C
0.8 MIN.
E 0.42 ±0.06 1.5
C
B
0.47 ±0.06 3.0
0.42 ±0.06 0.41 +0.03 –0.05
E: Emitter C: Collector (Fin) B: Base
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Note
SYMBOL ICBO IEBO hFE1 hFE2
TEST CONDITIONS VCB = −80 V, IE = 0 VEB = −6.0 V, IC = 0 VCE = −2.0 V, IC = −0.1 A VCE = −2.0 V, IC = −1.0 A VCE = −2.0 V, IC = −0.1 A IC = −2.0 A, IB = −0.1 A IC = −3.0 A, IB = −0.15 A IC = −2.0 A, IB = −0.1 A VCE = −10 V, IE = 0.3 A VCB = −10 V, IE = 0, f = 1.0 MHz IC = −1.0 A, VCC = −10 V, RL = 5.0 Ω, IB1 = −IB2 = −0.1 A,
MIN.
TYP.
MAX. −100 −100
UNIT nA nA −
80 100 −0.63 200 −0.685 −0.2 −0.3 −0.89 160 45 155 510 35 400 −0.73 −0.4 −0.6 −1.2
− V V V V MHz pF ns ns ns
Base to E...