MT29F1GxxABB

www.DataSheet.co.kr 1Gb: x8, x16 NAND Flash Memory Features 1Gb NAND Flash Memory MT29F1GxxABB Features Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) – Page size x16: 1,056 words (1,024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1,024 blocks READ performance – Random READ: 25µs (MAX) – Sequential READ: 50ns (MIN) WRITE performance – PROGRAM PAGE: 250µs (TYP) – BLOCK ERASE: 2.0ms (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Data retention: 10 years The first block (block address 00h) is guaranteed to be valid without ECC (up to 1,000 PROGRAM/ ERASE cycles) VCC: 1.65–1.95V Automated PROGRAM and ERASE Basic NAND Flash command set – PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET New commands – PAGE READ CACHE MODE – READ ID2 (contact factory) – READ UNIQUE ID (contact factory) – Programmable I/O – OTP – BLOCK LOCK Operation status byte: Provides a software method for detecting: – Operation completion – Pass/fail condition – Write-protect status Ready/busy# signal (R/B#): Provides a hardware method of detecting operation completion LOCK signal: Protects selectable ranges of blocks Figure 1: 63-Ball VFBGA x8 WP# signal: Write-protects the entire device Reset required after power-up Options1 Configuration – x8 – x16 Package – 63-ball VFBGA 13mm x 10.5mm x 1...