ME4435

www.DataSheet.co.kr ME4435 P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION The ME4435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● -30V/-9.1A,RDS(ON)=20mΩ@VGS=-10V ● -30V/-6.9A,RDS(ON)=35mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch ● DSC ● LCD Display inverter PIN CONFIGURATION (SOP-8) Top View Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(tJ=150℃) Pulsed Drain Current Avalanche Energy with Single Pulse(L=0.1mH) Continuous Source Current (Diode Conduction) Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM EAS IS PD TJ RθJA RθJC 10 secs Steady State -30 ±2...