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PNP Transistor. 2SB1587 Datasheet

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PNP Transistor. 2SB1587 Datasheet






2SB1587 Transistor. Datasheet pdf. Equivalent




2SB1587 Transistor. Datasheet pdf. Equivalent





Part

2SB1587

Description

Silicon PNP Transistor



Feature


Darlington 2SB1587 (70Ω) E B Equival ent circuit C Silicon PNP Epitaxial Pl anar Transistor (Complement to type 2SD 2438) Application : Audio, Series Regul ator and General Purpose sAbsolute max imum ratings (Ta=25°C) sElectrical Cha racteristics (Ta=25°C) External Dimen sions FM100(TO3PF) Symbol Ratings Un it Symbol Conditions Ratings Unit VCBO –160 V ICBO V.
Manufacture

Sanken electric

Datasheet
Download 2SB1587 Datasheet


Sanken electric 2SB1587

2SB1587; CB=–160V –100max µA VCEO –150 V IEBO VEB=–5V –100max µA V EBO –5 V V(BR)CEO IC=–30mA – 150min V IC –8 A hFE VCE=–4V, IC=–6A 5000min∗ IB –1 A VCE (sat) IC=–6A, IB=–6mA –2.5max V PC 75(Tc=25°C) W VBE(sat) IC= 6A, IB=–6mA –3.0max V Tj 150 °C fT VCE=–12V, IE=1A 65typ MHz Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 160typ pF ∗hF.


Sanken electric 2SB1587

E Rank O(5000 to 12000), P(6500 to 20000 ), Y(15000 to 30000) sTypical Switchin g Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 IB2 ton ts tg tf (V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) –60 10 –6 –10 5 –6 6 0.7typ 3.6typ 0.9typ 16.2 23.0±0.3 9.5±0.2 0.8 0.2 5.5 15.6±0.2 5.5±0.2 3.45 ±0. 2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.


Sanken electric 2SB1587

.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0 .1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. DC Current Gain hFE Co llector Current IC(A) –23150˚2˚C5C ((CCC(aaCssaeesTeTeeTmempp)m)p) Colle ctor-Emitter Saturation Voltage VCE(sat )(V) Collector Current IC(A) –10mA 2.5mA I C– V CE Characteristics (T ypical) –8 –2.0mA –1.8mA –1..

Part

2SB1587

Description

Silicon PNP Transistor



Feature


Darlington 2SB1587 (70Ω) E B Equival ent circuit C Silicon PNP Epitaxial Pl anar Transistor (Complement to type 2SD 2438) Application : Audio, Series Regul ator and General Purpose sAbsolute max imum ratings (Ta=25°C) sElectrical Cha racteristics (Ta=25°C) External Dimen sions FM100(TO3PF) Symbol Ratings Un it Symbol Conditions Ratings Unit VCBO –160 V ICBO V.
Manufacture

Sanken electric

Datasheet
Download 2SB1587 Datasheet




 2SB1587
Darlington
2SB1587
(70) E
B
Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2438) Application : Audio, Series Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions FM100(TO3PF)
Symbol
Ratings
Unit
Symbol
Conditions
Ratings
Unit
VCBO
–160
V
ICBO
VCB=–160V
–100max
µA
VCEO
–150
V
IEBO
VEB=–5V
–100max
µA
VEBO
–5
V
V(BR)CEO
IC=–30mA
–150min
V
IC
–8
A
hFE
VCE=–4V, IC=–6A
5000min
IB
–1
A
VCE(sat)
IC=–6A, IB=–6mA
–2.5max
V
PC
75(Tc=25°C)
W
VBE(sat)
IC=–6A, IB=–6mA
–3.0max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
65typ
MHz
Tstg
–55 to +150
°C
COB
VCB=–10V, f=1MHz
160typ
pF
hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
IB2
ton
tstg
tf
(V)
()
(A)
(V)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
–60
10
–6
–10
5
–6
6
0.7typ 3.6typ 0.9typ
15.6±0.2
5.5±0.2
3.45 ±0.2
ø3.3±0.2
a
b
5.45±0.1
1.75
2.15
1.05
+0.2
-0.1
5.45±0.1
0.65
+0.2
-0.1
0.8
3.35
1.5 4.4 1.5
Weight : Approx 6.5g
a. Part No.
B C E b. Lot No.
I C– V CE Characteristics (Typical)
–8
–2.0mA –1.8mA –1.5mA
–1.3mA
–6
–1.0mA
–0.8mA
–4
–0.5mA
IB=–0.3mA
–2
V CE( s a t ) – I B Characteristics (Typical)
–3
–2
–8A
–6A
IC=–4A
–1
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V)
–8
–6
–4
–2
0
0
–2
–4
–6
Collector-Emitter Voltage VCE(V)
0
–0.2 –0.5 –1
–5 –10
Base Current IB(mA)
–50 –100 –200
0
0
–1
–2
–3
Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
40,000
(VCE=–4V)
Typ
10,000
5,000
h FE– I C Temperature Characteristics (Typical)
50000
125˚C
(VCE=–4V)
10000
5000
25˚C
–30˚C
θ j-a– t Characteristics
4
1
0.5
2,000
–0.2
–0.5
–1
Collector Current IC(A)
–5 –8
1000
–0.2
–0.5
–1
Collector Current IC(A)
0.2
–5 –8
1
5 10
50 100
Time t(ms)
500 1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V)
100
80
Typ
60
40
20
0
0.02
0.05
0.1
0.5 1
Emitter Current IE(A)
50
58
Safe Operating Area (Single Pulse)
–20
–10
–5
DC
10
0
10
ms
m
s
–1
–0.5
–0.1
Without Heatsink
Natural Cooling
–0.05
–2
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Pc–Ta Derating
80
60
40
20
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)











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