2SB1592

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 q q Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * Applied (Ta=25˚C) Ratings –30 –25 –11 –10 –3 1 150 –55 ~ +150 Unit V V V A A W ˚C ˚C 1 2 3 2.54±0.15 1.27 0.45 –0.1 1.27 Symbol VCBO VCEO VEBO ICP* IC PC Tj Tstg +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 s Features 0.45 –0.1 +0.15 2.3±0.2 1:Emitter 2:Collector 3:Base TO–92NL Package are shot pulse of ≤1ms width s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance (Ta=25˚C) Symbol VCBO VCEO VEBO hFE*1 VCE(sat) fT Cob Conditions IC = –10µA, IE = 0 IC = –1mA, IB = 0 IE = –10µA, IC = 0 VCE = –2V, IC = –1.4A*2 IC = –1.4A, IB = –25mA*2 VCB = –6V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz *2 min –30 –25 –11 90 typ max Unit V V V 450 – 0.16 150 85 – 0.22 V MHz pF Pulse measurement *1h FE Rank classification Q 90 ~ 180 R 130 ~ 450 Rank hFE 1 Transistor PC — Ta 1.2 –3.0 Ta=25˚C 2SB1592 IC — VCE –6 VCE=–2V –5 IB=–12mA IC — VBE Collector ...