2SB1603A

Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1603A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 7° 1 2 3 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1603 2SB1603A (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 * Conditions VCB = –40V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –1A IC = –2A, IB = – 0.1A IC = –2A, IB = – 0.1A VCE = –5V, IC = – 0.5A, f = 10MHz IC = –2A, IB1 = – 0.2A, IB2 = 0.2A min typ max –50 –50 Unit µA µA V –20 –40 45 90 260 – 0.5 –1.5 150 0.3 0.4 0.1 Forward current transfer ratio Collector to emitter saturation voltage Base to emit...