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MA4PH237-1079T Dataheets PDF



Part Number MA4PH237-1079T
Manufacturers MA-COM
Logo MA-COM
Description Packaged PIN Diodes
Datasheet MA4PH237-1079T DatasheetMA4PH237-1079T Datasheet (PDF)

www.DataSheet.co.kr Packaged PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode Heatsink Packages 30,31,32,36,43,94,111,120, 150,255 258,296,1072,1079 Leaded Packages @+25°C 144, 186, 276,1088 Surface Mount Package +25°C 1056 Pdiss = T (max Operating)-25°C Thermal.

  MA4PH237-1079T   MA4PH237-1079T


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www.DataSheet.co.kr Packaged PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Fast Speed Voltage Ratings to 1500 Volts Wide Selection of Carrier Lifetimes Wide Selection of Capacitances Assortment of Packages Styles Available Screened for Military Applications Rev V.9 Maximum Power Dissipation Cathode Heatsink Packages 30,31,32,36,43,94,111,120, 150,255 258,296,1072,1079 Leaded Packages @+25°C 144, 186, 276,1088 Surface Mount Package +25°C 1056 Pdiss = T (max Operating)-25°C Thermal Resistance Pdiss = 250mW Description and Applications M/A-COM's broad line of packaged PIN diodes encompasses a comprehensive range of electrical characteristics and package outlines. This diverse union of semiconductor technology and chip packaging gives considerable flexibility to the circuit designer. The fast switching series of packaged PIN diodes utilize a thin I-region and silicon oxide or glass passivated chips which provide for low leakage currents and low insertion loss. Using in process control monitors to regulate wafer fabrication parameters these devices achieve consistent performance in control circuit applications. The high voltage product line of packaged PIN diodes employs M/A-COM's unique CERMACHIP® passivation process which provides for a hard glass encapsulation that hermetically seals the active area of the chip. These ® packaged CERMACHIP PIN diodes are ideally suited for use in high power applications where high RF voltages are present. The diode chips are bonded into sealed ceramic packages that are designed for the most stringent electrical and environmental conditions. A wide choice of packages are available which can be mounted into a variety of microwave and RF circuit media. The Packaged PIN Diodes series are designed to have a high inherent reliability and may be ordered screened to meet many MIL-STD reliability levels. Pdiss = 300mW Co-Axial Packages 31,32,94 36 30, 296 120,255 Leaded/Surface Mount Packages Thru Hole 276 1088 1072,1079 186 1056 144 Threaded Packages Absolute Maximum Ratings Parameter Voltage Operating Temperature Storage Temperature Operating and Storage (Case Style 1088) 1 Absolution Max. As Specified in Table - 65°C to +175°C - 65°C to +200°C - 65°C to +125°C 150 111 43 258 Unpackaged Die 1. Operation beyond any one of the above conditions may cause permanent damage to the device. Specifications subject to change without prior notification. 131,132.134 , 212 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for • North America Tel: 800.366.2266 / Fax: 978.366.2266 development. Performance is based on target specifications, simulated results, and/or prototype • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under developVisit www.macomtech.com for additional data sheets and product information. ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make volume is not guaranteed. changes to the product(s) or information contained herein without notice. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Packaged PIN Diodes RoHS Compliant 35V to 250V Fast Switching PIN Diodes Specifications (TAMB = +25°C) Minimum Reverse Voltage1 @ IR <10μA Volts 100 100 200 250 ( Unless otherwise specified ) ( Unless otherwise Rev V.9 specified ) Part Number Maximum Capacitance CT @ -10V f = 1MHz pF 0.25 0.35 0.35 0.40 2 Maximum Series Res. RS @ 10mA f = 500MHz Ω 2.50 1.50 1.50 0.60 3 Maximum Thermal Resistance Nominal Characteristics I-Region Width Microns µM 12 12 20 30 Carrier Lifetime4 °C/W 60 30 30 20 nS 60 100 200 1000 TRR5 nS 5 20 60 100 MA4P202-120 MA4P203-30 MA4P303-32 MA4P404-30 Notes: 1. 2. 3. 4. 5. The minimum specified VR (Reverse Voltage) is sourced and the resultant reverse leakage current, Ir, is measured to be <10μA At VR = -50V Rs measured at IF = +50mA, f = 100MHz. Nominal carrier life time specified with diode biased at IF = +10mA , IREV = -6mA Nominal TRR (reverse recovery time) specified with diode biased at IF = +20mA , IREV = -200mA. Package Options Chip 30 31,32, 94 111 120, 255 186 276 1088 1072 131,132 1056 Package dimensions can be found on the M/A-COM website at http://www.macom.com/TechApps/OutlineDrawings.asp 35V to 500V MELF General Purpose Switching Diodes Specifications (TAMB = +25°C) Minimum Reverse Voltage2 IR <10μA Volts 35 200 200 200 200 500 (Unless otherwise specified) Part Number 1 Maximum Capacitance CT @10V f = 1MHz pF 1.2 0.5 1.5 0.5 0.8 1.54 Maximum Series Res. RS @10mA f = 100MHz Ω 0.5 3.0 0.6@50mA 6.0 25.0 0.25@100mA CW Power Dissipation Ratin.


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