650V N-Channel MOSFET
FQPF7N65C — N-Channel QFET® MOSFET
FQPF7N65C
N-Channel QFET® MOSFET
650 V, 7 A, 1.4 Ω
August 2013
Description
Featur...
Description
FQPF7N65C — N-Channel QFET® MOSFET
FQPF7N65C
N-Channel QFET® MOSFET
650 V, 7 A, 1.4 Ω
August 2013
Description
Features
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
7 A, 650 V, RDS(on).= 1.4 Ω (Max.) @ VGS = 10 V, ID = 3.5 A Low Gate Charge (Typ. 28 nC)
Low Crss (Typ. 12 pF) 100% Avalanche Tested
GD S
TO-220F
D
G S
TO-220F Y-formed
D
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G!
●
◀▲
● ●
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S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pu...
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