MT4953

www.DataSheet.co.kr MT4953 Dual P-Channel High Density Trench MOSFET ‹ DESCRIPTION The MT4953 uses advanced technology to provide excellent Rds(on), low switching loss and reasonable price. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. ‹ ¾ ¾ ¾ ¾ ¾ FEATURES -30V/-4.9A, RDS(ON) = 65mΩ @ VGS = -10V -30V/-3.6A, RDS(ON) = 105mΩ @ VGS = -4.5V Super high dense cell trench design for low RDS(ON) Rugged and reliable SOP-8 package design ‹ ¾ ¾ ¾ ¾ APPLICATIONS POWER Management in Note Portable Equipment Battery Powered System DC/DC Converter LCD Display ¾ ‹ PIN CONFIGURATION -1- www.matrix-microtech.com.tw Ver 1.01 6/2/2009. Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr MT4953 Dual P-Channel High Density Trench MOSFET ‹ ABSOLUTE MAXIMUM RATINGS O (TA=25 C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (1) Pulse (2) Symbol VDS VGS ID IDM IS PD TJ TSTG Maximum -30 ± 20 -4.9 -20 -1.7 2.0 150 - 55 to 150 Unit V V A A W O Drain-Source Diode Forward Current (1) Maximum Power Dissipation (1) Operating junction temperature range Storage temperature range C C O ‹ THERMAL RESISTANCE RATINGS Thermal Resistance Symbol RθJA Ma...