P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description
MT4953
The MT4953 provide the designer with t...
Description
www.DataSheet.co.kr
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description
MT4953
The MT4953 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
* Simple Drive Requirement * Lower on-resistance * Fast Switching BVDSS RDS(ON) ID - 30 V 53 mΩ -5A
Package Dimensions
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
2 1 1 1
Symbol VDS VGS ID @T A=25℃ ID @T A=70℃ I DM PD @TA=25℃ Tj, Tstg
Ratings -30 +/- 16 -5 -4 -20 2 0.02 -55~+150
Unit V V A A A W W/℃ ℃
Total Power Dissipation Linear Derating Factor
o perating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
1
Symbol Max. Rthj-amb
Value 62.5
Unit ℃/W
MT4953
Page: 1/7
Datasheet pdf - http://www.DataSheet4U.net/
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P-CHANNEL ENHANCEMENT MODE POWER MOSFET Electrical Characteristics (Tj = 25℃ unless otherwise specified)
MT4953
Source-Drain Diode
Notes: 1. Surface Mounted on FR4 Board, t≦10sec. 2. Pulse width≦300us, duty cycle≦2%.
MT4953
Page: 2/7
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
P-CHANNEL ENHANCEMENT MODE POWER MOSFET Characteristics Curve Fig 1. Typical Output Charact...
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