Power Transistors
2SB1638, 2SB1638A
Silicon PNP epitaxial planar type
For low-voltage switching
7.0±0.3 3.0±0.2 3.5±0.2...
Power
Transistors
2SB1638, 2SB1638A
Silicon
PNP epitaxial planar type
For low-voltage switching
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
s Features
q q q
Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings –40 –50 –20 –40 –5 –12 –7 15 1.3 150 –55 to +150 Unit V
7.2±0.3
0.8±0.2
1.1±0.1
1.0±0.2 10.0 –0.
+0.3
0.85±0.1 0.4±0.1
0.75±0.1
2.3±0.2 4.6±0.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB1638 2SB1638A 2SB1638 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.3
Unit: mm
0 to 0.15
emitter voltage 2SB1638A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V
10.2±0.3 7.2±0.3
V A A W ˚C ˚C
3.0±0.2
1.0 max.
2.5
1.1±0.1
0.75±0.1
0.5 max.
0.9±0.1 0 to 0.15
1
2
3
2.3±0.2 4.6±0.4
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1638 2SB1638A 2SB1638 2SB1638A
1:Base 2:Collector 3:Emitter I Type Package (Y)
(TC=25˚C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = –40V, IE = 0 VCB = –50V, IE = 0 VEB = –5V, IC = 0 IC = –10mA, IB = 0 VCE = –2V, IC = – 0.1A VCE = –2V, IC = –2A IC = –5A, IB = – 0....