2SB1640

2SB1640 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1640 Audio Frequency Power Amplifier Unit: mm Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) Collector metal (fin) is covered with mold region. Complementary to 2SD2525 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −60 −60 −7 −3 −6 −0.5 1.8 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10T1A Weight: 1.5 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE fT Cob Test Condition VCB = −60 V, IE = 0 VEB = −7 V, IC = 0 IC = −50 mA, IB = 0 VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −2 A IC = −2 A, IB = −0.2 A VCE = −5 V, IC = −0.5 A VCE = −5 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −60 100 15 ― ― ― ― Typ. ― ― ― ― ― −0.1 −0.75 9 50 Max −10 −10 ― 320 ― −1.5 −1.0 ― ― V V MHz pF Unit µA µA V Marking B1640 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2004-07-26 2SB1640 IC – VCE −3.0 −10...