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2SB1648 Dataheets PDF



Part Number 2SB1648
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SB1648 Datasheet2SB1648 Datasheet (PDF)

(70Ω) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1648 –150 –150 –5 –17 –1 200(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1648 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) 2SB1648 –100max –100max –150min 5000min∗ –2.5max –3.0max 45typ 320typ V V 20.0min 4.0max B Equiva.

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(70Ω) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1648 –150 –150 –5 –17 –1 200(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C °C 2SB1648 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–30mA VCE=–4V, IC=–10A IC=–10A, IB=–10mA IC=–10A, IB=–10mA VCE=–12V, IE=2A VCB=–10V, f=1MHz (Ta=25°C) 2SB1648 –100max –100max –150min 5000min∗ –2.5max –3.0max 45typ 320typ V V 20.0min 4.0max B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2561) Application : Audio, Series Regulator and General Purpose External Dimensions MT-200 36.4±0.3 24.4±0.2 2-ø3.2±0.1 9 7 21.4±0.3 2.1 6.0±0.2 Unit µA µA V a b MHz pF 2 3 1.05 +0.2 -0.1 5.45±0.1 B C E 5.45±0.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –40 RL (Ω) 4 IC (A) –10 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –10 IB2 (mA) 10 ton (µs) 0.7typ tstg (µs) 1.6typ tf (µs) 1.1typ Weight : Approx 18.4g a. Type No. b. Lot No. I C – V CE Characteristics (Typical) 0m A –1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –3 I C – V BE Temperature Characteristics (Typical) 17 15 Collector Current I C (A) (V CE =–4V) –17 mA –3mA –2mA –15 –50 –1 .5 m A Collector Current I C (A) –1.0 mA –0.8 mA I C =–15A –10 –0.5mA 5˚C p) Tem ase –30 ˚C ( I B =–0.3mA –5 0 0 –2 –4 –6 0 –0.2 –0.5 –1 –5 –10 –50 –100 –200 0 0 –1 25˚ C (C 5 Cas –1 I C =–5A eT –2 emp 12 ) I C =–1 0A (Ca se 10 Te –2 mp ) –3 Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V) 50,000 DC C urrent G ain h FE (V C E =–4V) 50000 DC C urrent G ain h FE 125˚C 25˚C 10000 5000 –30˚C (V C E =–4V) θ j - a (˚C /W ) h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics 2 Typ Transient Thermal Resistance 1 10,000 5,000 0.5 1,000 –0.2 –0.5 –1 –5 –10 –17 1000 –0.2 –0.5 –1 –5 –10 –17 0.1 1 10 100 Time t(ms) 1000 2000 Collector Current I C (A) Collector Current I C (A) f T – I E Characteristics (Typical) (V C E =–12V) 60 Safe Operating Area (Single Pulse) 200 P c – T a Derating Maxim um Power Dissip ation P C (W) Cut-o ff F requ ency f T (MH Z ) 160 W ith 40 In fin 120 ite he at si nk 80 20 40 Without Heatsink 0 25 50 75 100 12 5 150 0 0.02 0.05 0.1 0.5 1 5 10 5 0 Emitter Current I E (A) Ambient Temperature Ta(˚C) 55 .


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