2SB1658

DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) High DC Current Gain hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse)* Base Current (DC) * PW ≤ 10ms, Duty Cycle ≤ 10 % Maximum Power Dissipation Total Power Dissipation (TC = 25 °C) Total Power Dissipation (TA = 25 °C) Maximum Temperature Junction Temperature Storage Temperature PT PT Tj Tstg 10 W 1.0 W 150 °C −55 to 150 °C VCB0 VCE0 VEB0 IC(DC) IC(Pulse) IB(DC) −30 V −30 V −6.0 V −5.0 A −10 A −2.0 A 1 2 3 2.5 ± 0.2 (0.098) 13.0 MIN. (0.512 MIN.) 1.2 (0.047) 0.55+0.08 −0.05 (0.021) 0.8 +0.08 −0.05 (0.031) 2.3 2.3 (0.090) (0.090) 1.2 (0.047) 1. Emitter 2. Collector connected to mounting plane 3. Base ELECTRICAL CHARACTERISTICS (TA = 25 °C) PARAMETER Collector Cutoff Currnet Emitter Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Collector Saturation Voltage Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance SYMBOL ICB0 IEB0 hFE1 hFE2 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat) fT Cob...