TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applicatio...
TOSHIBA
Transistor Silicon
PNP Triple Diffused Type
2SB1667(SM)
2SB1667(SM)
Audio Frequency Power Amplifier Applications
Unit: mm
Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
PC
−60 −60 −7 −3 −0.5 1.5 25
V V V A A
W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note1: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-10S2A
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the
Weight: 1.4 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Downloaded from Elcodis.com electronic components distributor
1
2009-12-21
Electrical Characteristics (Ta = 25°C)
2SB1667(SM)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gai...