2SB561

2SB561 Silicon PNP Epitaxial Application Low frequency power amplifier Complementary pair with 2SD467 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SB561 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings –25 –20 –5 –0.7 –1.0 0.5 150 –55 to +150 Unit V V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Note: B 85 to 170 Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO hFE* 1 Min –25 –20 –5 — 85 — — — — Typ — — — — — –0.2 –0.75 350 20 Max — — — –1.0 240 –0.5 –1.0 — — Unit V V V µA Test conditions I C = –10 µA, IE = 0 I C = –1 mA, RBE = ∞ I E = –10 µA, IC = 0 VCB = –20 V, IE = 0 VCE = –1 V, I C = –0.15 A (Pulse test) VCE(sat) VBE fT Cob V V MHz pF I C = –0.5 A, IB = –0.05 A VCE = –1 V, IC = –0.15 A VCE = –1 V, IC = –0.15 A VCB = –10 V, IE = 0 f = 1 MHz 1. The 2SB561 is grouped by hFE as follows. C 120 to 240 2 2SB561 Maximum Collector Dissipation Curve 0.6 Collector power dissipation PC (W) –500 Collector current IC (mA) –2.5 Typical Output Charac...