P40NF10

www.DataSheet.co.kr N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE STP40NF10 STB40NF10 www.DataSheet4U.com STB40NF10-1 s s s s STP40NF10 STB40NF10 - STB40NF10-1 VDSS 100 V 100 V 100 V RDS(on) < 0.028 Ω < 0.028 Ω < 0.028 Ω ID 50 A 50 A 50 A 3 3 1 2 s TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 1 D2PAK TO-220 3 12 I2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM (l) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 50 35 200 150 1 20 150 – 55 to 175 (1) I SD...