Document
Discrete IGBTs Silicon N-Channel IGBT
GT40QR21
GT40QR21
1. Applications
• Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
Start of commercial production
2010-12
1
2014-01-07
Rev.2.0
GT40QR21
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque
(Tc = 25) (Tc = 100)
(Tc = 25)
(Note 1)
VCES VGES
IC
ICP IF IFP PC Tj Tstg TOR
1200 ±25 40 35 80 20 80 230 175 -55 to 175 0.8
V A
W Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: Ensure that the junction temperature does not exceed 175.
5. Thermal Characteristics
Characteristics Junction-to-case thermal resistance
Symbol Rth(j-c)
Max
Unit
0.65
/W
2
2014-01-07
Rev.2.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25, unless otherwise specified)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage Collector-emitter saturation voltage
Collector-emitter saturation voltage
Diode forward voltage
Symbol
Test Condition
Min
IGES VGE = ±25 V, VCE = 0 V
ICES VCE = 1200 V, VGE = 0 V
VGE(OFF) IC = 40 mA, VCE = 5 V
4.5
VCE(sat)(1) IC = 20 A, VGE = 15 V
VCE(sat)(2) IC = 20 A, VGE = 15 V,
Tj = 125
VCE(sat)(3) IC = 20 A, VGE = 15 V,
Tj = 175
VCE(sat)(4) IC = 40 A, VGE = 15 V
VCE(sat)(5) IC = 40 A, VGE = 15 V,
Tj = 125
VCE(sat)(6) IC = 40 A, VGE = 15 V,
Tj = 175
VF
IF = 15 A, VGE = 0 V
GT40QR21
Typ. Max Unit
±100 nA
1
mA
7.5
V
1.50
1.75
1.89
1.90 2.70 2.29
2.50
2.6
3
2014-01-07
Rev.2.0
GT40QR21
6.2. Dynamic Characteristics (Ta = 25, unless otherwise specified)
Characteristics Input capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Switching loss (turn-off switching loss)
Switching loss (turn-off switching loss)
Reverse recovery time
Symbol
Test Condition
Cies VCE = 10 V, VGE = 0 V, f = 1 MHz
tr ton tf toff Eoff(1)
Resistive load VCC = 600 V, IC = 40 A, VGG = ±15 V, RG = 39 Ω See Fig. 6.2.1, 6.2.2.
Inductive Load VCC = 280 V, IC = 40 A, L = 30 µH,C = 0.33 µF, VGG = 20 V, RG = 10 Ω See Fig. 6.2.3, 6.2.4.
Eoff(2)
Inductive Load
VCC = 280 V, IC = 40 A, L = 30 µH,C = 0.33 µH,
VGG = 20 V, RG = 10 Ω Tc = 125 See Fig. 6.2.3, 6.2.4.
trr IF = 15 A, VGE = 0 V, di/dt = -20 A/µs
Min Typ. Max Unit
1500
pF
0.12
µs
0.18
0.20 0.40
0.40
0.16
mJ
0.29
0.60
µs
Fig. 6.2.1 Test Circuit of Switching Time
Fig. 6.2.2 Timing Chart of Switching Time
Fig. 6.2.3 Test Circuit of Switching Loss
Fig. 6.2.4 Timing Chart of Switching Loss
4
2014-01-07
Rev.2.0
7. Marking (Note)
GT40QR21
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels. [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the D.