Silicon N-Channel IGBT
Discrete IGBTs Silicon N-Channel IGBT
GT40QR21
GT40QR21
1. Applications
• Dedicated to Voltage-Resonant Inverter Switc...
Description
Discrete IGBTs Silicon N-Channel IGBT
GT40QR21
GT40QR21
1. Applications
Dedicated to Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
Start of commercial production
2010-12
1
2014-01-07
Rev.2.0
GT40QR21
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque
(Tc = 25) (Tc = 100)
(Tc = 25)
(Note 1)
VCES VGES
IC
ICP IF IFP PC Tj Tstg TOR
1200 ±25 40 35 80 20 80 230 175 -55 to 175 0.8
V A
W Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c...
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