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Ordering number:ENN6412
P-Channel Silicon MOSFET
2SJ585LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2078B
[2SJ585LS]
10.0
3.5 7.2
4.5
2.8
3.2
16.1
16.0
0.9 1.2
14.0
3.6
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS
Conditions
0.6
Ratings –250 ±30 –6.5 –26 2.0 30 150 –55 to +150
Unit V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Drain-to-Source Breakdown Voltage Gate-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) | yfs | RDS(on) ID=–1mA, VGS=0 IG=±100µA, VDS=0 VDS=–250V, VGS=0 VGS=±25V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–3.5A ID=–3.5A, VGS=–10V –3.5 2.4 4.0 0.56 0.7 Conditions Ratings min –250 ±30 –100 ±10 –5.0 typ max Unit V V µA µA V S Ω
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2756 No.6412–1/4
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2SJ585LS
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD VDS=–20V, f=1MHz VDS=–20V, f=1MHz VDS=–20V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=–100V, VGS=–10V, ID=–6.5A VDS=–100V, VGS=–10V, ID=–6.5A VDS=–100V, VGS=–10V, ID=–6.5A IS=–6.5A, VGS=0 Conditions Ratings min typ 720 190 80 20 60 75 37 35 6 18 –0.9 –1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Marking : J585
Switching Time Test Circuit
VDD= --100V VIN 0V --10V VIN PW=10µs D.C.≤1% ID= --3.5A RL=28.6Ω
D
VOUT
G
P.G
50Ω
2SJ585LS
S
--10 --9
ID -- VDS
V
0V
--13 --12 --11
ID -- VGS
Tc= -25°C
25
--8
--1
=
--8
--8 V
--9
Drain Current, ID – A
V GS
--7 --6 --5 --4 --3 --2 --1
Drain Current, ID – A
--7V
--10 --9 --8 --7 --6 --5 --4 --3 --2
--6V
--5V
0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10
--1 0 0 --1 --2 --3 --4 --5 --6 --7 --9 --10
Drain-to-Source Voltage, VDS – V
1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 --4
IT01509 1.2
Gate-to-Source Voltage, VGS – V
°C
VDS= --10V
75°C
IT01510
RDS(on) -- VGS
Static Drain-to-Source On-State Resistance, RDS (on) – Ω Tc=25°C ID= --3.5A
RDS(on) -- Tc
VGS= --10V ID= --3.5A
Static Drain-to-Source On-State Resistance, RDS (on) – Ω
1.0
0.8
0.6
0.4
0.2
--6
--8
--10
--12
--14
--16
--18
--20
0 --50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS – V
IT01511
Case Temperature, Tc – ˚C
IT01512
No.6412–2/4
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2SJ585LS
10
yfs -- ID
VDS= --10V
Forward Transfer Admittance, | yfs | – S
7 5 3 2
--10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01
IF -- VSD
VGS = 0
Tc
1.0 7 5 3 2
°C -25 =-
75°
C
25°
C
Forward Current, IF – A
Tc=7 5°C
0 --0.3
0.1 --0.1 2 3 5 7 --1.0 2 3 5 7
Drain Current, ID – A
1000 7 5
2 --10 IT01513 10000 7 5 3 2
--0.6
--25°C
--0.9
25°C
--1.2 IT01514
Diode Forward Voltage, VSD – V
SW Time -- ID
VDD= --100V VGS= --10V tf td(off)
Ciss, Coss, Crss -- VDS
f=1MHz
Switching Time, SW Time – ns
3 2 100 7 5 3 2 10 7 5 3 2 1.0 --0.1
Ciss, Coss, Crss – pF
1000 7 5 3 2 100 7 5 3 2 10
Ciss
tr
td(on)
Coss
Crss
2
3
5
7
--1.0
2
3
5
7
--10
0
--5
--10
--15
--20
--25
--30 IT01516
Drain Current, ID – A
--10 --9
IT01515 --100 7 5 3 2
Drain-to-Source Voltage, VDS – V
VGS -- Qg
VDS= --100V ID= --6.5A
Dra.