2SB632

Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features · High collector dissipation and wide ASO. Package Dimensions unit:mm 2009B [2SB632, 632K/2SD612, 612K] ( ) : 2SB632, 632K 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions 2SB632, D612 (–)25 http://www.DataSheet4U.net/ 2SB632K, D612K (–)35 (–)35 (–)5 (–)2 (–)3 1 Unit V V V A A W W (–)25 Tc=25˚C Tj Tstg 10 150 –55 to +150 ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector-to-Base Breakdown Voltage Collector-to-Emitter Brakdown Voltage Emitter-to-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Symbol V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO ICBO IEBO IE=(–)10µA, IC=0 VCB=(–)20V, IE=0 VEB=(–)4V, IC=0 Conditions B632, D612 B632K, D612K B632, D612 B632K, D612K Ratings min (–)25 (–)35 (–)25 (–)35 (–)5 (–)1 (–)1 typ max Unit V V V V V µA µA * : The 2SB632/2SD612 are classified by 500mA hFE as follows : 60 D 120 100 E 200 160 F 320 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremel...